Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
AED 24.68
AED 2.468 Each (In a Pack of 10) (ex VAT)
AED 25.91
AED 2.591 Each (In a Pack of 10) (inc. VAT)
10
AED 24.68
AED 2.468 Each (In a Pack of 10) (ex VAT)
AED 25.91
AED 2.591 Each (In a Pack of 10) (inc. VAT)
10
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Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | AED 2.468 | AED 24.68 |
50 - 90 | AED 1.628 | AED 16.28 |
100 - 240 | AED 1.628 | AED 16.28 |
250 - 490 | AED 1.575 | AED 15.75 |
500+ | AED 1.575 | AED 15.75 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Country of Origin
China
Product details