Toshiba TK N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Product details
MOSFET Transistors, Toshiba
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AED 24.68
AED 4.935 Each (In a Pack of 5) (ex VAT)
AED 25.91
AED 5.182 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 24.68
AED 4.935 Each (In a Pack of 5) (ex VAT)
AED 25.91
AED 5.182 Each (In a Pack of 5) (inc. VAT)
Standard
5
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| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | AED 4.935 | AED 24.68 |
| 50 - 120 | AED 4.462 | AED 22.31 |
| 125 - 245 | AED 4.252 | AED 21.26 |
| 250 - 495 | AED 3.885 | AED 19.42 |
| 500+ | AED 3.622 | AED 18.11 |
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
67 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products