N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-3PN Toshiba TK40J60U(F)

RS Stock No.: 760-3142Brand: ToshibaManufacturers Part No.: TK40J60U(F)
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

600 V

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

320 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

55 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.5mm

Width

4.5mm

Transistor Material

Si

Series

TK

Height

20mm

Product details

MOSFET Transistors, Toshiba

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AED 41.35

Each (ex VAT)

AED 43.42

Each (inc. VAT)

N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-3PN Toshiba TK40J60U(F)
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 41.35
2AED 82.70
3AED 124.05
4AED 165.40
5AED 206.75
6AED 248.10
7AED 289.45
8AED 330.80
9AED 372.15
10AED 326.00
11AED 358.60
12AED 391.20
13AED 423.80
14AED 456.40
15AED 489.00

AED 41.35

Each (ex VAT)

AED 43.42

Each (inc. VAT)

N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-3PN Toshiba TK40J60U(F)
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 41.35
2AED 82.70
3AED 124.05
4AED 165.40
5AED 206.75
6AED 248.10
7AED 289.45
8AED 330.80
9AED 372.15
10AED 326.00
11AED 358.60
12AED 391.20
13AED 423.80
14AED 456.40
15AED 489.00

Buy in bulk

quantityUnit price
1 - 9AED 41.35
10 - 49AED 32.60
50 - 99AED 30.80
100+AED 29.55

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

600 V

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

320 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

55 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.5mm

Width

4.5mm

Transistor Material

Si

Series

TK

Height

20mm

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more