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Toshiba TK N-Channel MOSFET, 58 A, 60 V, 3-Pin TO-220SIS TK58A06N1,S4X(S

RS Stock No.: 896-2401Brand: ToshibaManufacturers Part No.: TK58A06N1,S4X(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

AED 16.80

AED 3.36 Each (In a Pack of 5) (ex VAT)

AED 17.64

AED 3.528 Each (In a Pack of 5) (inc. VAT)

Toshiba TK N-Channel MOSFET, 58 A, 60 V, 3-Pin TO-220SIS TK58A06N1,S4X(S

AED 16.80

AED 3.36 Each (In a Pack of 5) (ex VAT)

AED 17.64

AED 3.528 Each (In a Pack of 5) (inc. VAT)

Toshiba TK N-Channel MOSFET, 58 A, 60 V, 3-Pin TO-220SIS TK58A06N1,S4X(S
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 45AED 3.36AED 16.80
50 - 95AED 2.782AED 13.91
100 - 245AED 2.52AED 12.60
250 - 495AED 2.468AED 12.34
500+AED 2.468AED 12.34

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Country of Origin

China

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more