Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
105 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Height
15.1mm
Product details
MOSFET Transistors, Toshiba
AED 32.81
AED 6.562 Each (In a Pack of 5) (ex VAT)
AED 34.45
AED 6.89 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 32.81
AED 6.562 Each (In a Pack of 5) (ex VAT)
AED 34.45
AED 6.89 Each (In a Pack of 5) (inc. VAT)
Standard
5
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
105 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Height
15.1mm
Product details