Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.4V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
35 W @ 25 °C
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
-1.7V
Height
15mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
AED 38.85
AED 1.942 Each (In a Pack of 20) (ex VAT)
AED 40.79
AED 2.039 Each (In a Pack of 20) (inc. VAT)
20
AED 38.85
AED 1.942 Each (In a Pack of 20) (ex VAT)
AED 40.79
AED 2.039 Each (In a Pack of 20) (inc. VAT)
20
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 40 | AED 1.942 | AED 38.85 |
| 60+ | AED 1.732 | AED 34.65 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.4V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
35 W @ 25 °C
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
-1.7V
Height
15mm
Country of Origin
Japan
Product details


