N-Channel MOSFET, 61.8 A, 600 V, 3-Pin TO-247 Toshiba TK62N60W5,S1VF(S

RS Stock No.: 125-0585Brand: ToshibaManufacturers Part No.: TK62N60W5,S1VF(S
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

61.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

400 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

15.94mm

Typical Gate Charge @ Vgs

205 nC @ 10 V

Height

20.95mm

Forward Diode Voltage

1.7V

Product details

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

AED 49.50

Each (ex VAT)

AED 51.98

Each (inc. VAT)

N-Channel MOSFET, 61.8 A, 600 V, 3-Pin TO-247 Toshiba TK62N60W5,S1VF(S

1

Available in multiples of 1
1AED 49.50
2AED 99.00
3AED 148.50
4AED 198.00
5AED 223.50
6AED 268.20
7AED 312.90
8AED 357.60
9AED 402.30
10AED 408.50
11AED 449.35
12AED 490.20
13AED 531.05
14AED 571.90
15AED 612.75

AED 49.50

Each (ex VAT)

AED 51.98

Each (inc. VAT)

N-Channel MOSFET, 61.8 A, 600 V, 3-Pin TO-247 Toshiba TK62N60W5,S1VF(S
Stock information temporarily unavailable.

1

Available in multiples of 1
1AED 49.50
2AED 99.00
3AED 148.50
4AED 198.00
5AED 223.50
6AED 268.20
7AED 312.90
8AED 357.60
9AED 402.30
10AED 408.50
11AED 449.35
12AED 490.20
13AED 531.05
14AED 571.90
15AED 612.75

Buy in bulk

quantityUnit price
1 - 4AED 49.50
5 - 9AED 44.70
10+AED 40.85

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

61.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

400 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

15.94mm

Typical Gate Charge @ Vgs

205 nC @ 10 V

Height

20.95mm

Forward Diode Voltage

1.7V

Product details

MOSFET N-Channel, TK6 & TK7 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more