Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Transistor Material
Si
Height
15mm
Country of Origin
China
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
AED 26.25
AED 5.25 Each (In a Pack of 5) (ex VAT)
AED 27.56
AED 5.512 Each (In a Pack of 5) (inc. VAT)
5
AED 26.25
AED 5.25 Each (In a Pack of 5) (ex VAT)
AED 27.56
AED 5.512 Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | AED 5.25 | AED 26.25 |
25 - 95 | AED 4.62 | AED 23.10 |
100 - 245 | AED 4.042 | AED 20.21 |
250 - 495 | AED 3.885 | AED 19.42 |
500+ | AED 3.78 | AED 18.90 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Transistor Material
Si
Height
15mm
Country of Origin
China
Product details