Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Country of Origin
China
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
AED 57.54
AED 14.385 Each (In a Pack of 4) (ex VAT)
AED 60.42
AED 15.104 Each (In a Pack of 4) (inc. VAT)
Standard
4
AED 57.54
AED 14.385 Each (In a Pack of 4) (ex VAT)
AED 60.42
AED 15.104 Each (In a Pack of 4) (inc. VAT)
Standard
4
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 4 - 36 | AED 14.385 | AED 57.54 |
| 40 - 76 | AED 12.652 | AED 50.61 |
| 80 - 196 | AED 11.078 | AED 44.31 |
| 200 - 996 | AED 10.342 | AED 41.37 |
| 1000+ | AED 9.765 | AED 39.06 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Country of Origin
China
Product details


