Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
192 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Series
TK
Height
15.1mm
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
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AED 5.05
Each (In a Pack of 5) (ex VAT)
AED 5.302
Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 5.05
Each (In a Pack of 5) (ex VAT)
AED 5.302
Each (In a Pack of 5) (inc. VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | AED 5.05 | AED 25.25 |
25 - 95 | AED 4.20 | AED 21.00 |
100 - 245 | AED 3.70 | AED 18.50 |
250 - 495 | AED 3.55 | AED 17.75 |
500+ | AED 3.50 | AED 17.50 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
192 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Series
TK
Height
15.1mm
Product details