Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Series
TK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Height
2.3mm
Country of Origin
China
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
AED 46.20
AED 5.775 Each (In a Pack of 8) (ex VAT)
AED 48.51
AED 6.064 Each (In a Pack of 8) (inc. VAT)
Standard
8
AED 46.20
AED 5.775 Each (In a Pack of 8) (ex VAT)
AED 48.51
AED 6.064 Each (In a Pack of 8) (inc. VAT)
Standard
8
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
8 - 72 | AED 5.775 | AED 46.20 |
80 - 152 | AED 4.882 | AED 39.06 |
160 - 392 | AED 4.778 | AED 38.22 |
400 - 792 | AED 4.672 | AED 37.38 |
800+ | AED 4.515 | AED 36.12 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Series
TK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Height
2.3mm
Country of Origin
China
Product details