Toshiba DTMOSIV N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK TK7P65W,RQ(S
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
6.1mm
Length
6.6mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.7V
Height
2.3mm
Country of Origin
Japan
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
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AED 25.20
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AED 26.46
AED 2.646 Each (In a Pack of 10) (inc. VAT)
10
AED 25.20
AED 2.52 Each (In a Pack of 10) (ex VAT)
AED 26.46
AED 2.646 Each (In a Pack of 10) (inc. VAT)
10
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
6.1mm
Length
6.6mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.7V
Height
2.3mm
Country of Origin
Japan
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products