Toshiba DTMOSIV N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK TK8P60W5,RVQ(S

RS Stock No.: 133-2804Brand: ToshibaManufacturers Part No.: TK8P60W5,RVQ(S
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

560 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

22 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

6.1mm

Length

6.6mm

Forward Diode Voltage

1.7V

Height

2.3mm

Country of Origin

Japan

Product details

MOSFET N-channel, TK8 & TK9 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

AED 38.32

AED 3.832 Each (In a Pack of 10) (ex VAT)

AED 40.24

AED 4.024 Each (In a Pack of 10) (inc. VAT)

Toshiba DTMOSIV N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK TK8P60W5,RVQ(S

10

Available in multiples of 10
10AED 38.32
20AED 76.65
30AED 114.98
40AED 153.30
50AED 191.62
60AED 229.95
70AED 268.28
80AED 306.60
90AED 344.92
100AED 383.25
110AED 421.58
120AED 459.90
130AED 498.22
140AED 536.55
150AED 574.88

AED 38.32

AED 3.832 Each (In a Pack of 10) (ex VAT)

AED 40.24

AED 4.024 Each (In a Pack of 10) (inc. VAT)

Toshiba DTMOSIV N-Channel MOSFET, 8 A, 600 V, 3-Pin DPAK TK8P60W5,RVQ(S
Stock information temporarily unavailable.

10

Available in multiples of 10
10AED 38.32
20AED 76.65
30AED 114.98
40AED 153.30
50AED 191.62
60AED 229.95
70AED 268.28
80AED 306.60
90AED 344.92
100AED 383.25
110AED 421.58
120AED 459.90
130AED 498.22
140AED 536.55
150AED 574.88

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

560 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

22 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

6.1mm

Length

6.6mm

Forward Diode Voltage

1.7V

Height

2.3mm

Country of Origin

Japan

Product details

MOSFET N-channel, TK8 & TK9 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more