Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
900 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.5mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Width
4.5mm
Transistor Material
Si
Height
20mm
Product details
MOSFET N-channel, TK8 & TK9 Series, Toshiba
MOSFET Transistors, Toshiba
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AED 23.10
Each (Supplied in a Tube) (ex VAT)
AED 24.26
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
1
AED 23.10
Each (Supplied in a Tube) (ex VAT)
AED 24.26
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 49 | AED 23.10 |
50 - 149 | AED 15.60 |
150 - 374 | AED 15.20 |
375 - 749 | AED 14.75 |
750+ | AED 14.40 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
900 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.5mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Width
4.5mm
Transistor Material
Si
Height
20mm
Product details