Toshiba U-MOSVIII-H N-Channel MOSFET, 32 A, 30 V, 8-Pin SOP TPH11003NL,LQ(S

RS Stock No.: 133-2808Brand: ToshibaManufacturers Part No.: TPH11003NL,LQ(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

21 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5mm

Length

5mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.95mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

AED 22.05

AED 2.205 Each (In a Pack of 10) (ex VAT)

AED 23.15

AED 2.315 Each (In a Pack of 10) (inc. VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 32 A, 30 V, 8-Pin SOP TPH11003NL,LQ(S

10

Available in multiples of 10
10AED 22.05
20AED 44.10
30AED 66.15
40AED 88.20
50AED 110.25
60AED 132.30
70AED 154.35
80AED 176.40
90AED 198.45
100AED 220.50
110AED 242.55
120AED 264.60
130AED 286.65
140AED 308.70
150AED 330.75

AED 22.05

AED 2.205 Each (In a Pack of 10) (ex VAT)

AED 23.15

AED 2.315 Each (In a Pack of 10) (inc. VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 32 A, 30 V, 8-Pin SOP TPH11003NL,LQ(S
Stock information temporarily unavailable.

10

Available in multiples of 10
10AED 22.05
20AED 44.10
30AED 66.15
40AED 88.20
50AED 110.25
60AED 132.30
70AED 154.35
80AED 176.40
90AED 198.45
100AED 220.50
110AED 242.55
120AED 264.60
130AED 286.65
140AED 308.70
150AED 330.75

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

21 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5mm

Length

5mm

Typical Gate Charge @ Vgs

7.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.2V

Height

0.95mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more