Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5mm
Typical Gate Charge @ Vgs
9.8 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Forward Diode Voltage
1.2V
Height
0.95mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
AED 34.65
AED 1.732 Each (In a Pack of 20) (ex VAT)
AED 36.38
AED 1.819 Each (In a Pack of 20) (inc. VAT)
20
AED 34.65
AED 1.732 Each (In a Pack of 20) (ex VAT)
AED 36.38
AED 1.819 Each (In a Pack of 20) (inc. VAT)
20
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 80 | AED 1.732 | AED 34.65 |
| 100 - 180 | AED 1.628 | AED 32.55 |
| 200 - 980 | AED 1.628 | AED 32.55 |
| 1000 - 1980 | AED 1.575 | AED 31.50 |
| 2000+ | AED 1.575 | AED 31.50 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5mm
Typical Gate Charge @ Vgs
9.8 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Forward Diode Voltage
1.2V
Height
0.95mm
Country of Origin
Japan
Product details


