Toshiba TTA1452B,S4X(S PNP Transistor, -12 A, -80 V, 3-Pin TO-220SIS

RS Stock No.: 144-5242Brand: ToshibaManufacturers Part No.: TTA1452B,S4X(S
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Technical Document

Specifications

Brand

Toshiba

Transistor Type

PNP

Maximum DC Collector Current

-12 A

Maximum Collector Emitter Voltage

-80 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Maximum Power Dissipation

30 W

Minimum DC Current Gain

120

Transistor Configuration

Single

Maximum Collector Base Voltage

-80 V

Maximum Emitter Base Voltage

-6 V

Maximum Operating Frequency

50 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

10 x 4.5 x 15mm

Maximum Operating Temperature

+150 °C

Country of Origin

Japan

Product details

PNP Power Transistors, Toshiba

Bipolar Transistors, Toshiba

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Stock information temporarily unavailable.

AED 33.60

AED 6.72 Each (In a Pack of 5) (ex VAT)

AED 35.28

AED 7.056 Each (In a Pack of 5) (inc. VAT)

Toshiba TTA1452B,S4X(S PNP Transistor, -12 A, -80 V, 3-Pin TO-220SIS

5

Available in multiples of 5
5AED 33.60
10AED 67.20
15AED 100.80
20AED 134.40
25AED 141.75
30AED 170.10
35AED 198.45
40AED 226.80
45AED 255.15
50AED 283.50
55AED 311.85
60AED 340.20
65AED 368.55
70AED 396.90
75AED 425.25

AED 33.60

AED 6.72 Each (In a Pack of 5) (ex VAT)

AED 35.28

AED 7.056 Each (In a Pack of 5) (inc. VAT)

Toshiba TTA1452B,S4X(S PNP Transistor, -12 A, -80 V, 3-Pin TO-220SIS
Stock information temporarily unavailable.

5

Available in multiples of 5
5AED 33.60
10AED 67.20
15AED 100.80
20AED 134.40
25AED 141.75
30AED 170.10
35AED 198.45
40AED 226.80
45AED 255.15
50AED 283.50
55AED 311.85
60AED 340.20
65AED 368.55
70AED 396.90
75AED 425.25

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
5 - 20AED 6.72AED 33.60
25+AED 5.67AED 28.35

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Technical Document

Specifications

Brand

Toshiba

Transistor Type

PNP

Maximum DC Collector Current

-12 A

Maximum Collector Emitter Voltage

-80 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Maximum Power Dissipation

30 W

Minimum DC Current Gain

120

Transistor Configuration

Single

Maximum Collector Base Voltage

-80 V

Maximum Emitter Base Voltage

-6 V

Maximum Operating Frequency

50 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

10 x 4.5 x 15mm

Maximum Operating Temperature

+150 °C

Country of Origin

Japan

Product details

PNP Power Transistors, Toshiba

Bipolar Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more