Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
9.2 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.52mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Height
15.85mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.8V
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
AED 4.30
Each (In a Pack of 50) (ex VAT)
AED 4.515
Each (In a Pack of 50) (inc. VAT)
50
AED 4.30
Each (In a Pack of 50) (ex VAT)
AED 4.515
Each (In a Pack of 50) (inc. VAT)
50
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
50 - 200 | AED 4.30 | AED 215.00 |
250+ | AED 4.20 | AED 210.00 |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
9.2 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.52mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Height
15.85mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.8V
Product details