Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.4 A
Maximum Drain Source Voltage
250 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
5mm
Length
5.99mm
Typical Gate Charge @ Vgs
14.9 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.07mm
Country of Origin
China
AED 35.96
AED 7.192 Each (In a Pack of 5) (ex VAT)
AED 37.76
AED 7.552 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 35.96
AED 7.192 Each (In a Pack of 5) (ex VAT)
AED 37.76
AED 7.552 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | AED 7.192 | AED 35.96 |
| 50 - 95 | AED 5.985 | AED 29.92 |
| 100 - 495 | AED 4.672 | AED 23.36 |
| 500 - 995 | AED 4.095 | AED 20.48 |
| 1000+ | AED 3.675 | AED 18.38 |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.4 A
Maximum Drain Source Voltage
250 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
5mm
Length
5.99mm
Typical Gate Charge @ Vgs
14.9 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.07mm
Country of Origin
China


