Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
80 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
29 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.99mm
Typical Gate Charge @ Vgs
105 nC @ 10 V
Width
5mm
Transistor Material
Si
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.07mm
Product details
P-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Stock information temporarily unavailable.
Please check again later.
AED 0.10
Each (In a Pack of 10) (ex VAT)
AED 0.105
Each (In a Pack of 10) (inc. VAT)
10
AED 0.10
Each (In a Pack of 10) (ex VAT)
AED 0.105
Each (In a Pack of 10) (inc. VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | AED 0.10 | AED 1.00 |
50 - 90 | AED 0.10 | AED 1.00 |
100+ | AED 0.10 | AED 1.00 |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
80 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
29 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.99mm
Typical Gate Charge @ Vgs
105 nC @ 10 V
Width
5mm
Transistor Material
Si
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.07mm
Product details