Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SC-70-6L
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.35mm
Number of Elements per Chip
1
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
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AED 29.00
AED 2.90 Each (In a Pack of 10) (ex VAT)
AED 30.45
AED 3.045 Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 29.00
AED 2.90 Each (In a Pack of 10) (ex VAT)
AED 30.45
AED 3.045 Each (In a Pack of 10) (inc. VAT)
Standard
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | AED 2.90 | AED 29.00 |
50 - 90 | AED 2.65 | AED 26.50 |
100 - 490 | AED 2.50 | AED 25.00 |
500 - 990 | AED 2.35 | AED 23.50 |
1000+ | AED 2.10 | AED 21.00 |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SC-70-6L
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.35mm
Number of Elements per Chip
1
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China