N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L Vishay Siliconix SiA106DJ-T1-GE3

RS Stock No.: 178-3667Brand: Vishay SiliconixManufacturers Part No.: SiA106DJ-T1-GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET

Package Type

SC-70-6L

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.2mm

Typical Gate Charge @ Vgs

8.9 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

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AED 1.55

Each (On a Reel of 3000) (ex VAT)

AED 1.628

Each (On a Reel of 3000) (inc. VAT)

N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L Vishay Siliconix SiA106DJ-T1-GE3

3000

Available in multiples of 3000
3000AED 4,650.00
6000AED 9,300.00
9000AED 13,950.00
12000AED 18,600.00
15000AED 23,250.00
18000AED 27,900.00
21000AED 32,550.00
24000AED 37,200.00
27000AED 41,850.00
30000AED 46,500.00
33000AED 51,150.00
36000AED 55,800.00
39000AED 60,450.00
42000AED 65,100.00
45000AED 69,750.00

AED 1.55

Each (On a Reel of 3000) (ex VAT)

AED 1.628

Each (On a Reel of 3000) (inc. VAT)

N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L Vishay Siliconix SiA106DJ-T1-GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000AED 4,650.00
6000AED 9,300.00
9000AED 13,950.00
12000AED 18,600.00
15000AED 23,250.00
18000AED 27,900.00
21000AED 32,550.00
24000AED 37,200.00
27000AED 41,850.00
30000AED 46,500.00
33000AED 51,150.00
36000AED 55,800.00
39000AED 60,450.00
42000AED 65,100.00
45000AED 69,750.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Series

TrenchFET

Package Type

SC-70-6L

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.2mm

Typical Gate Charge @ Vgs

8.9 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more