Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
SC-70-6L
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Number of Elements per Chip
1
Width
1.35mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Country of Origin
China
AED 26.25
AED 2.625 Each (In a Pack of 10) (ex VAT)
AED 27.56
AED 2.756 Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 26.25
AED 2.625 Each (In a Pack of 10) (ex VAT)
AED 27.56
AED 2.756 Each (In a Pack of 10) (inc. VAT)
Standard
10
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | AED 2.625 | AED 26.25 |
| 50 - 90 | AED 2.362 | AED 23.62 |
| 100 - 490 | AED 2.205 | AED 22.05 |
| 500 - 990 | AED 2.10 | AED 21.00 |
| 1000+ | AED 1.838 | AED 18.38 |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
SC-70-6L
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Number of Elements per Chip
1
Width
1.35mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Country of Origin
China


