N-Channel MOSFET, 79 A, 100 V, 8-Pin SO-8 Vishay Siliconix SIR104DP-T1-RE3

RS Stock No.: 178-3684Brand: Vishay SiliconixManufacturers Part No.: SIR104DP-T1-RE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

5.99mm

Typical Gate Charge @ Vgs

56 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Country of Origin

China

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AED 4.75

Each (On a Reel of 3000) (ex VAT)

AED 4.988

Each (On a Reel of 3000) (inc. VAT)

N-Channel MOSFET, 79 A, 100 V, 8-Pin SO-8 Vishay Siliconix SIR104DP-T1-RE3

3000

Available in multiples of 3000
3000AED 14,250.00
6000AED 28,500.00
9000AED 42,750.00
12000AED 57,000.00
15000AED 71,250.00
18000AED 85,500.00
21000AED 99,750.00
24000AED 114,000.00
27000AED 128,250.00
30000AED 142,500.00
33000AED 156,750.00
36000AED 171,000.00
39000AED 185,250.00
42000AED 199,500.00
45000AED 213,750.00

AED 4.75

Each (On a Reel of 3000) (ex VAT)

AED 4.988

Each (On a Reel of 3000) (inc. VAT)

N-Channel MOSFET, 79 A, 100 V, 8-Pin SO-8 Vishay Siliconix SIR104DP-T1-RE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000AED 14,250.00
6000AED 28,500.00
9000AED 42,750.00
12000AED 57,000.00
15000AED 71,250.00
18000AED 85,500.00
21000AED 99,750.00
24000AED 114,000.00
27000AED 128,250.00
30000AED 142,500.00
33000AED 156,750.00
36000AED 171,000.00
39000AED 185,250.00
42000AED 199,500.00
45000AED 213,750.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

5.99mm

Typical Gate Charge @ Vgs

56 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more