Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
3.6V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.99mm
Typical Gate Charge @ Vgs
27.5 nC @ 10 V
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Country of Origin
China
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Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
3.6V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.99mm
Typical Gate Charge @ Vgs
27.5 nC @ 10 V
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Country of Origin
China