Promotional Code

Use promotional code RSUAE5 and get extra 5% off on the price of all products | Payment Options: Debit or Credit Card, Wire Transfer, Cash or Cheque

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

RS Stock No.: 178-3962Brand: Vishay SiliconixManufacturers Part No.: SiS110DN-T1-GE3
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

14.2 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

4V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

8.5 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

AED 28.75

AED 1.15 Each (In a Pack of 25) (ex VAT)

AED 30.19

AED 1.208 Each (In a Pack of 25) (inc. VAT)

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25AED 28.75
50AED 57.50
75AED 86.25
100AED 115.00
125AED 143.75
150AED 172.50
175AED 201.25
200AED 230.00
225AED 258.75
250AED 287.50
275AED 316.25
300AED 345.00
325AED 373.75
350AED 402.50
375AED 431.25

AED 28.75

AED 1.15 Each (In a Pack of 25) (ex VAT)

AED 30.19

AED 1.208 Each (In a Pack of 25) (inc. VAT)

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25AED 28.75
50AED 57.50
75AED 86.25
100AED 115.00
125AED 143.75
150AED 172.50
175AED 201.25
200AED 230.00
225AED 258.75
250AED 287.50
275AED 316.25
300AED 345.00
325AED 373.75
350AED 402.50
375AED 431.25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

14.2 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

4V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

8.5 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more