P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3

RS Stock No.: 178-3697Brand: Vishay SiliconixManufacturers Part No.: SiSH617DN-T1-GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

30 V

Package Type

1212

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Length

3.15mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

3.15mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.07mm

Country of Origin

China

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AED 1.15

Each (On a Reel of 3000) (ex VAT)

AED 1.208

Each (On a Reel of 3000) (inc VAT)

P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3

3000

Available in multiples of 3000
3000AED 3,450.00
6000AED 6,900.00
9000AED 10,350.00
12000AED 13,800.00
15000AED 17,250.00
18000AED 20,700.00
21000AED 24,150.00
24000AED 27,600.00
27000AED 31,050.00
30000AED 34,500.00
33000AED 37,950.00
36000AED 41,400.00
39000AED 44,850.00
42000AED 48,300.00
45000AED 51,750.00

AED 1.15

Each (On a Reel of 3000) (ex VAT)

AED 1.208

Each (On a Reel of 3000) (inc VAT)

P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000AED 3,450.00
6000AED 6,900.00
9000AED 10,350.00
12000AED 13,800.00
15000AED 17,250.00
18000AED 20,700.00
21000AED 24,150.00
24000AED 27,600.00
27000AED 31,050.00
30000AED 34,500.00
33000AED 37,950.00
36000AED 41,400.00
39000AED 44,850.00
42000AED 48,300.00
45000AED 51,750.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

30 V

Package Type

1212

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Length

3.15mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

3.15mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

1.07mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more