Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
2.68 A
Maximum Drain Source Voltage
20 V
Series
TrenchFET
Package Type
SC-70-6L
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
13.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Width
1.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
4.2 nC @ 4.5 V
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Country of Origin
China
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AED 0.85
Each (On a Reel of 3000) (ex VAT)
AED 0.892
Each (On a Reel of 3000) (inc. VAT)
3000
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
2.68 A
Maximum Drain Source Voltage
20 V
Series
TrenchFET
Package Type
SC-70-6L
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
13.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Width
1.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
4.2 nC @ 4.5 V
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Country of Origin
China