Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
SC-70-6L
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
13.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
26 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Country of Origin
China
AED 2,835.00
AED 0.945 Each (On a Reel of 3000) (ex VAT)
AED 2,976.75
AED 0.992 Each (On a Reel of 3000) (inc. VAT)
3000
AED 2,835.00
AED 0.945 Each (On a Reel of 3000) (ex VAT)
AED 2,976.75
AED 0.992 Each (On a Reel of 3000) (inc. VAT)
3000
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Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
SC-70-6L
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
13.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
26 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Country of Origin
China