P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK Vishay Siliconix SQD40031EL_GE3

RS Stock No.: 178-3715Brand: Vishay SiliconixManufacturers Part No.: SQD40031EL_GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

2.38mm

Number of Elements per Chip

1

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

186 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

6.22mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

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AED 3.80

Each (On a Reel of 2000) (ex VAT)

AED 3.99

Each (On a Reel of 2000) (inc. VAT)

P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK Vishay Siliconix SQD40031EL_GE3

2000

Available in multiples of 2000
2000AED 7,600.00
4000AED 15,200.00
6000AED 22,800.00
8000AED 30,400.00
10000AED 38,000.00
12000AED 45,600.00
14000AED 53,200.00
16000AED 60,800.00
18000AED 68,400.00
20000AED 76,000.00
22000AED 83,600.00
24000AED 91,200.00
26000AED 98,800.00
28000AED 106,400.00
30000AED 114,000.00

AED 3.80

Each (On a Reel of 2000) (ex VAT)

AED 3.99

Each (On a Reel of 2000) (inc. VAT)

P-Channel MOSFET, 100 A, 30 V, 3-Pin DPAK Vishay Siliconix SQD40031EL_GE3
Stock information temporarily unavailable.

2000

Available in multiples of 2000
2000AED 7,600.00
4000AED 15,200.00
6000AED 22,800.00
8000AED 30,400.00
10000AED 38,000.00
12000AED 45,600.00
14000AED 53,200.00
16000AED 60,800.00
18000AED 68,400.00
20000AED 76,000.00
22000AED 83,600.00
24000AED 91,200.00
26000AED 98,800.00
28000AED 106,400.00
30000AED 114,000.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

2.38mm

Number of Elements per Chip

1

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

186 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

6.22mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more