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P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ415EP-T1_GE3

RS Stock No.: 178-3717Brand: Vishay SiliconixManufacturers Part No.: SQJ415EP-T1_GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Country of Origin

China

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AED 5,550.00

AED 1.85 Each (On a Reel of 3000) (ex VAT)

AED 5,827.50

AED 1.942 Each (On a Reel of 3000) (inc. VAT)

P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ415EP-T1_GE3

3000

Available in multiples of 3000
3000AED 5,550.00
6000AED 11,100.00
9000AED 16,650.00
12000AED 22,200.00
15000AED 27,750.00
18000AED 33,300.00
21000AED 38,850.00
24000AED 44,400.00
27000AED 49,950.00
30000AED 55,500.00
33000AED 61,050.00
36000AED 66,600.00
39000AED 72,150.00
42000AED 77,700.00
45000AED 83,250.00

AED 5,550.00

AED 1.85 Each (On a Reel of 3000) (ex VAT)

AED 5,827.50

AED 1.942 Each (On a Reel of 3000) (inc. VAT)

P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ415EP-T1_GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000AED 5,550.00
6000AED 11,100.00
9000AED 16,650.00
12000AED 22,200.00
15000AED 27,750.00
18000AED 33,300.00
21000AED 38,850.00
24000AED 44,400.00
27000AED 49,950.00
30000AED 55,500.00
33000AED 61,050.00
36000AED 66,600.00
39000AED 72,150.00
42000AED 77,700.00
45000AED 83,250.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more