Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
9.4 A
Maximum Drain Source Voltage
200 V
Series
TrenchFET
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
760 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.99mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Country of Origin
China
AED 10,395.00
AED 3.465 Each (On a Reel of 3000) (ex VAT)
AED 10,914.75
AED 3.638 Each (On a Reel of 3000) (inc. VAT)
3000
AED 10,395.00
AED 3.465 Each (On a Reel of 3000) (ex VAT)
AED 10,914.75
AED 3.638 Each (On a Reel of 3000) (inc. VAT)
3000
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Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
9.4 A
Maximum Drain Source Voltage
200 V
Series
TrenchFET
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
760 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
68 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.99mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Country of Origin
China