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Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3

RS Stock No.: 178-3722Brand: Vishay SiliconixManufacturers Part No.: SQJA76EP-T1_GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.99mm

Typical Gate Charge @ Vgs

66 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Country of Origin

China

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Stock information temporarily unavailable.

AED 8,347.50

AED 2.782 Each (On a Reel of 3000) (ex VAT)

AED 8,764.88

AED 2.921 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3

3000

Available in multiples of 3000
3000AED 8,347.50
6000AED 16,695.00
9000AED 25,042.50
12000AED 33,390.00
15000AED 41,737.50
18000AED 50,085.00
21000AED 58,432.50
24000AED 66,780.00
27000AED 75,127.50
30000AED 83,475.00
33000AED 91,822.50
36000AED 100,170.00
39000AED 108,517.50
42000AED 116,865.00
45000AED 125,212.50

AED 8,347.50

AED 2.782 Each (On a Reel of 3000) (ex VAT)

AED 8,764.88

AED 2.921 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000AED 8,347.50
6000AED 16,695.00
9000AED 25,042.50
12000AED 33,390.00
15000AED 41,737.50
18000AED 50,085.00
21000AED 58,432.50
24000AED 66,780.00
27000AED 75,127.50
30000AED 83,475.00
33000AED 91,822.50
36000AED 100,170.00
39000AED 108,517.50
42000AED 116,865.00
45000AED 125,212.50

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.99mm

Typical Gate Charge @ Vgs

66 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more