Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
250 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
163 nC @ 10 V
Height
11.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Automotive Standard
AEC-Q101
Country of Origin
Taiwan, Province Of China
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AED 6,680.00
AED 8.35 Each (On a Reel of 800) (ex VAT)
AED 7,014.00
AED 8.768 Each (On a Reel of 800) (inc. VAT)
800
AED 6,680.00
AED 8.35 Each (On a Reel of 800) (ex VAT)
AED 7,014.00
AED 8.768 Each (On a Reel of 800) (inc. VAT)
800
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
250 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
163 nC @ 10 V
Height
11.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Automotive Standard
AEC-Q101
Country of Origin
Taiwan, Province Of China