Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
106 nC @ 10 V
Height
11.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Automotive Standard
AEC-Q101
Country of Origin
Taiwan, Province Of China
AED 64.58
AED 6.458 Each (In a Pack of 10) (ex VAT)
AED 67.81
AED 6.781 Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 64.58
AED 6.458 Each (In a Pack of 10) (ex VAT)
AED 67.81
AED 6.781 Each (In a Pack of 10) (inc. VAT)
Standard
10
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Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
106 nC @ 10 V
Height
11.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Automotive Standard
AEC-Q101
Country of Origin
Taiwan, Province Of China


