Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 31.76
AED 6.352 Each (In a Pack of 5) (ex VAT)
AED 33.35
AED 6.67 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 31.76
AED 6.352 Each (In a Pack of 5) (ex VAT)
AED 33.35
AED 6.67 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | AED 6.352 | AED 31.76 |
| 50 - 120 | AED 6.038 | AED 30.19 |
| 125 - 245 | AED 4.462 | AED 22.31 |
| 250 - 495 | AED 4.148 | AED 20.74 |
| 500+ | AED 3.728 | AED 18.64 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details


