Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.41mm
Typical Gate Charge @ Vgs
8.7 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
AED 6.10
Each (In a Tube of 50) (ex VAT)
AED 6.405
Each (In a Tube of 50) (inc VAT)
50
AED 6.10
Each (In a Tube of 50) (ex VAT)
AED 6.405
Each (In a Tube of 50) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | AED 6.10 | AED 305.00 |
100 - 200 | AED 5.80 | AED 290.00 |
250+ | AED 5.50 | AED 275.00 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.41mm
Typical Gate Charge @ Vgs
8.7 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details