Vishay P-Channel MOSFET, 6.8 A, 100 V, 3-Pin TO-220AB IRF9520PBF
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
AED 54.08
AED 5.408 Each (In a Pack of 10) (ex VAT)
AED 56.78
AED 5.678 Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 54.08
AED 5.408 Each (In a Pack of 10) (ex VAT)
AED 56.78
AED 5.678 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | AED 5.408 | AED 54.08 |
| 50 - 90 | AED 5.302 | AED 53.02 |
| 100 - 240 | AED 4.62 | AED 46.20 |
| 250 - 490 | AED 4.41 | AED 44.10 |
| 500+ | AED 3.622 | AED 36.22 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products