Vishay P-Channel MOSFET, 6.8 A, 200 V, 3-Pin D2PAK IRF9640STRRPBF

RS Stock No.: 815-2676Brand: VishayManufacturers Part No.: IRF9640STRRPBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.67mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

9.65mm

Transistor Material

Si

Height

4.83mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

AED 89.78

AED 8.978 Each (In a Pack of 10) (ex VAT)

AED 94.27

AED 9.427 Each (In a Pack of 10) (inc. VAT)

Vishay P-Channel MOSFET, 6.8 A, 200 V, 3-Pin D2PAK IRF9640STRRPBF
Select packaging type

AED 89.78

AED 8.978 Each (In a Pack of 10) (ex VAT)

AED 94.27

AED 9.427 Each (In a Pack of 10) (inc. VAT)

Vishay P-Channel MOSFET, 6.8 A, 200 V, 3-Pin D2PAK IRF9640STRRPBF
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
10 - 10AED 8.978AED 89.78
20 - 40AED 7.35AED 73.50
50 - 90AED 6.878AED 68.78
100 - 240AED 6.615AED 66.15
250+AED 6.30AED 63.00

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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.8 A

Maximum Drain Source Voltage

200 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.67mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

9.65mm

Transistor Material

Si

Height

4.83mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more