Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
4.7mm
Minimum Operating Temperature
-55 °C
Height
9.01mm
Country of Origin
China
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 25.46
AED 5.092 Each (In a Pack of 5) (ex VAT)
AED 26.73
AED 5.347 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 25.46
AED 5.092 Each (In a Pack of 5) (ex VAT)
AED 26.73
AED 5.347 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | AED 5.092 | AED 25.46 |
| 50 - 120 | AED 4.305 | AED 21.52 |
| 125 - 245 | AED 4.042 | AED 20.21 |
| 250 - 495 | AED 3.78 | AED 18.90 |
| 500+ | AED 3.045 | AED 15.22 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
4.7mm
Minimum Operating Temperature
-55 °C
Height
9.01mm
Country of Origin
China
Product details


