Vishay N-Channel MOSFET, 3.6 A, 600 V, 3-Pin TO-220AB IRFBC30APBF

RS Stock No.: 708-4768Brand: VishayManufacturers Part No.: IRFBC30APBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

23 nC @ 10 V

Width

4.7mm

Minimum Operating Temperature

-55 °C

Height

9.01mm

Country of Origin

China

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

AED 25.46

AED 5.092 Each (In a Pack of 5) (ex VAT)

AED 26.73

AED 5.347 Each (In a Pack of 5) (inc. VAT)

Vishay N-Channel MOSFET, 3.6 A, 600 V, 3-Pin TO-220AB IRFBC30APBF
Select packaging type

AED 25.46

AED 5.092 Each (In a Pack of 5) (ex VAT)

AED 26.73

AED 5.347 Each (In a Pack of 5) (inc. VAT)

Vishay N-Channel MOSFET, 3.6 A, 600 V, 3-Pin TO-220AB IRFBC30APBF
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
5 - 45AED 5.092AED 25.46
50 - 120AED 4.305AED 21.52
125 - 245AED 4.042AED 20.21
250 - 495AED 3.78AED 18.90
500+AED 3.045AED 15.22

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

74 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

23 nC @ 10 V

Width

4.7mm

Minimum Operating Temperature

-55 °C

Height

9.01mm

Country of Origin

China

Product details

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more