Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Width
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Height
3.37mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 6.95
AED 6.95 Each (ex VAT)
AED 7.30
AED 7.30 Each (inc. VAT)
Standard
1
AED 6.95
AED 6.95 Each (ex VAT)
AED 7.30
AED 7.30 Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
1 - 9 | AED 6.95 |
10 - 49 | AED 6.39 |
50 - 99 | AED 5.87 |
100 - 249 | AED 5.56 |
250+ | AED 5.30 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Width
6.29mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Height
3.37mm
Minimum Operating Temperature
-55 °C
Product details