Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
18 nC @ 10 V
Maximum Operating Temperature
+175 °C
Length
5mm
Width
6.29mm
Transistor Material
Si
Height
3.37mm
Minimum Operating Temperature
-55 °C
Country of Origin
Philippines
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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AED 7.35
Each (ex VAT)
AED 7.72
Each (inc VAT)
1
AED 7.35
Each (ex VAT)
AED 7.72
Each (inc VAT)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 9 | AED 7.35 |
10 - 49 | AED 7.15 |
50 - 99 | AED 7.00 |
100 - 249 | AED 6.70 |
250+ | AED 6.60 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
18 nC @ 10 V
Maximum Operating Temperature
+175 °C
Length
5mm
Width
6.29mm
Transistor Material
Si
Height
3.37mm
Minimum Operating Temperature
-55 °C
Country of Origin
Philippines
Product details