Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.63mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 39.90
AED 3.99 Each (In a Pack of 10) (ex VAT)
AED 41.90
AED 4.19 Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 39.90
AED 3.99 Each (In a Pack of 10) (ex VAT)
AED 41.90
AED 4.19 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | AED 3.99 | AED 39.90 |
| 100 - 490 | AED 3.78 | AED 37.80 |
| 500 - 990 | AED 3.412 | AED 34.12 |
| 1000 - 2490 | AED 3.202 | AED 32.02 |
| 2500+ | AED 3.045 | AED 30.45 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.63mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


