Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
3.7mm
Length
6.7mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 68.25
AED 3.412 Each (In a Pack of 20) (ex VAT)
AED 71.66
AED 3.583 Each (In a Pack of 20) (inc. VAT)
Standard
20
AED 68.25
AED 3.412 Each (In a Pack of 20) (ex VAT)
AED 71.66
AED 3.583 Each (In a Pack of 20) (inc. VAT)
Standard
20
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 20 | AED 3.412 | AED 68.25 |
| 40 - 80 | AED 2.73 | AED 54.60 |
| 100 - 180 | AED 2.362 | AED 47.25 |
| 200 - 480 | AED 2.205 | AED 44.10 |
| 500+ | AED 1.89 | AED 37.80 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
3.7mm
Length
6.7mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.8mm
Minimum Operating Temperature
-55 °C
Product details


