Vishay N-Channel MOSFET, 960 mA, 200 V, 3-Pin SOT-223 IRFL210TRPBF

RS Stock No.: 815-2736PBrand: VishayManufacturers Part No.: IRFL210TRPBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

960 mA

Maximum Drain Source Voltage

200 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.7mm

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

6.7mm

Number of Elements per Chip

1

Transistor Material

Si

Height

1.8mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Vishay N-Channel MOSFET, 960 mA, 200 V, 3-Pin SOT-223 IRFL210TRPBF
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P.O.A.

Each (Supplied on a Reel) (ex VAT)

Vishay N-Channel MOSFET, 960 mA, 200 V, 3-Pin SOT-223 IRFL210TRPBF
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

960 mA

Maximum Drain Source Voltage

200 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.7mm

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

6.7mm

Number of Elements per Chip

1

Transistor Material

Si

Height

1.8mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more