Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
280 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
230 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 332.06
AED 13.282 Each (In a Tube of 25) (ex VAT)
AED 348.66
AED 13.946 Each (In a Tube of 25) (inc. VAT)
25
AED 332.06
AED 13.282 Each (In a Tube of 25) (ex VAT)
AED 348.66
AED 13.946 Each (In a Tube of 25) (inc. VAT)
25
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 25 - 25 | AED 13.282 | AED 332.06 |
| 50 - 100 | AED 12.60 | AED 315.00 |
| 125+ | AED 11.288 | AED 282.19 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
280 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
230 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details



