Vishay N-Channel MOSFET, 7.8 A, 800 V, 3-Pin TO-247AC IRFPE50PBF

Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.8 A
Maximum Drain Source Voltage
800 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Width
5.31mm
Maximum Operating Temperature
+150 °C
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 13.44
AED 13.44 Each (ex VAT)
AED 14.11
AED 14.11 Each (inc. VAT)
Standard
1
AED 13.44
AED 13.44 Each (ex VAT)
AED 14.11
AED 14.11 Each (inc. VAT)
Standard
1
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Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 9 | AED 13.44 |
| 10 - 24 | AED 11.55 |
| 25 - 49 | AED 10.76 |
| 50 - 99 | AED 10.08 |
| 100+ | AED 8.72 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
7.8 A
Maximum Drain Source Voltage
800 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Width
5.31mm
Maximum Operating Temperature
+150 °C
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details


