Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.38mm
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 32.81
AED 6.562 Each (Supplied as a Tape) (ex VAT)
AED 34.45
AED 6.89 Each (Supplied as a Tape) (inc. VAT)
Standard
5
AED 32.81
AED 6.562 Each (Supplied as a Tape) (ex VAT)
AED 34.45
AED 6.89 Each (Supplied as a Tape) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 5 - 45 | AED 6.562 | AED 32.81 |
| 50 - 120 | AED 6.142 | AED 30.71 |
| 125 - 245 | AED 5.565 | AED 27.82 |
| 250 - 495 | AED 5.25 | AED 26.25 |
| 500+ | AED 4.882 | AED 24.41 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
200 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.38mm
Country of Origin
China
Product details


