Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
250 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Width
2.39mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
6.22mm
Country of Origin
Malaysia
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 81.38
AED 8.138 Each (In a Pack of 10) (ex VAT)
AED 85.45
AED 8.545 Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 81.38
AED 8.138 Each (In a Pack of 10) (ex VAT)
AED 85.45
AED 8.545 Each (In a Pack of 10) (inc. VAT)
Standard
10
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
250 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Width
2.39mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
6.22mm
Country of Origin
Malaysia
Product details


