Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
400 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
6.22mm
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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AED 4.40
Each (In a Tube of 75) (ex VAT)
AED 4.62
Each (In a Tube of 75) (inc. VAT)
75
AED 4.40
Each (In a Tube of 75) (ex VAT)
AED 4.62
Each (In a Tube of 75) (inc. VAT)
75
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
400 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
13 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
6.22mm
Product details